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H6968CS - Dual N-Channel MOSFET

Download the H6968CS datasheet PDF. This datasheet also covers the H6968CS_Hi variant, as both devices belong to the same dual n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • RDS(on)=32mΩ@VGS=2.5V, ID=5.5A.
  • RDS(on)=24mΩ@VGS=4.5V, ID=6.5A.
  • Advanced Trench Process Technology.
  • High Density Cell Design for Ultra Low On-Resistance.
  • Specially Designed for Li ion Battery Packs Use.
  • Designed for Battery Switch Appliactions.
  • ESD Protected Absolute Maximum Ratings (T =25 C, unless otherwise noted) o A Symbol VDS VGS ID IDM PD Tj, Tstg RθJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H6968CS_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H6968CS
Manufacturer Hi-Sincerity Mocroelectronics
File Size 78.98 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet H6968CS Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Hi-Sincerity Mocroelectronics

Part Number Description
H6968CTS Dual N-Channel MOSFET
H6968S Dual N-Channel MOSFET

Full PDF Text Transcription

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www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200510 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 H6968S / H6968CS Dual N-Channel Enhancement-Mode MOSFET (20V, 6.5A) (Battery Switch, ESD Protected) • 8-Lead Plastic SO-8 Package Code: S Features • RDS(on)=32mΩ@VGS=2.5V, ID=5.5A • RDS(on)=24mΩ@VGS=4.5V, ID=6.5A • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Li ion Battery Packs Use • Designed for Battery Switch Appliactions • ESD Protected Absolute Maximum Ratings (T =25 C, unless otherwise noted) o A Symbol VDS VGS ID IDM PD Tj, Tstg RθJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed) *1 Parameter Ratings 20 ±12 6.5 30 2 1.
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