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H4422S - N-Channel Enhancement-Mode MOSFET

Download the H4422S datasheet PDF. This datasheet also covers the H4422S_Hi variant, as both devices belong to the same n-channel enhancement-mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • RDS(on)=13.5mΩ@VGS=10V, ID=11A.
  • RDS(on)=24mΩ@VGS=4.5V, ID=5A.
  • Advanced trench process technology.
  • High Density Cell Design for Ultra Low On-Resistance 5 6 7 8 4 3 2 1 Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol VDS VGS ID IDM PD Tj, Tstg RθJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed).
  • 1 o Parameter Ratings 30 ±20 11 50 2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H4422S_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H4422S
Manufacturer Hi-Sincerity Mocroelectronics
File Size 169.22 KB
Description N-Channel Enhancement-Mode MOSFET
Datasheet download datasheet H4422S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200907 Issued Date : 2009.03.09 Revised Date : Page No. : 1/5 H4422S N-Channel Enhancement-Mode MOSFET (30V, 11A) • 8-Lead Plastic SO-8 Package Code: S H4422S Symbol & Pin Assignment Features • RDS(on)=13.5mΩ@VGS=10V, ID=11A • RDS(on)=24mΩ@VGS=4.5V, ID=5A • Advanced trench process technology • High Density Cell Design for Ultra Low On-Resistance 5 6 7 8 4 3 2 1 Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol VDS VGS ID IDM PD Tj, Tstg RθJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed) *1 o Parameter Ratings 30 ±20 11 50 2.