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Hi-Sincerity Mocroelectronics

H4422S Datasheet Preview

H4422S Datasheet

N-Channel Enhancement-Mode MOSFET

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200907
Issued Date : 2009.03.09
Revised Date :
Page No. : 1/5
H4422S
N-Channel Enhancement-Mode MOSFET (30V, 11A)
8-Lead Plastic SO-8
Package Code: S
Features
RDS(on)=13.5mΩ@VGS=10V, ID=11A
RDS(on)=24mΩ@VGS=4.5V, ID=5A
Advanced trench process technology
High Density Cell Design for Ultra Low On-Resistance
H4422S Symbol & Pin Assignment
54
Pin 1 / 2 / 3: Source
6 3 Pin 4: Gate
7 2 Pin 5 / 6 / 7 / 8: Drain
81
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current (Continuous)
IDM Drain Current (Pulsed) *1
PD Total Power Dissipation @TA=25oC
Tj, Tstg
RθJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)*2
*1: Maximum DC current limited by the package
*2: 1-in2 2oz Cu PCB board
Ratings
30
±20
11
50
2.5
-55 to +150
50
Units
V
V
A
A
W
°C
°C/W
H4422S
HSMC Product Specification
Free Datasheet http://www.datasheet4u.com/




Hi-Sincerity Mocroelectronics

H4422S Datasheet Preview

H4422S Datasheet

N-Channel Enhancement-Mode MOSFET

No Preview Available !

HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Static
BVDSS
Characteristic
Drain-Source Breakdown Voltage
RDS(on)
Drain-Source On-State Resistance
VGS(th)
Gate Threshold Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
gFS Forward Transconductance
Drain-Source Diode Characteristics
IS Maximum Diode Forward Current
VSD Drain-Source Diode Forward Voltage
Test Conditions
VGS=0V, ID=250uA
VGS=10V, ID=11A
VGS=4.5V, ID=5.0A
VDS=VGS, ID=250uA
VDS=30V, VGS=0V
VGS=±20V, VDS=0V
VDS=10V, ID=10A
VGS=0V, IS=2.1A
Note: Pulse Test: Pulse Width 300us, Duty Cycle2%
Spec. No. : MOS200907
Issued Date : 2009.03.09
Revised Date :
Page No. : 2/5
Min. Typ. Max. Unit
30 -
-V
13.50
24
mΩ
1 - 3V
- - 1 uA
- - ±100 nA
20 -
S
- - 2.6 A
- - 1.2 V
H4422S
HSMC Product Specification
Free Datasheet http://www.datasheet4u.com/


Part Number H4422S
Description N-Channel Enhancement-Mode MOSFET
Maker Hi-Sincerity Mocroelectronics
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