Full PDF Text Transcription for HWL26NPB (Reference)
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HWL26NPB. For precise diagrams, and layout, please refer to the original PDF.
Features • Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless Applications • High Efficiency • 3V to 6V Operation Description The HWL26NPB is a medium Pow...
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ficiency • 3V to 6V Operation Description The HWL26NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications. HWL26NPB L-Band GaAs Power FET Autumn 2002 V1 Outline Dimensions 1 23 Pin 1: Source Pin 2: Gate Pin 3: Drain Absolute Maximum Ratings VDS Drain to Source Voltage +7V VGS Gate to Source Voltage -5V ID Drain Current IG Gate Current IDSS 1mA TCH Channel Temperature 150°C TSTG Storage Temperature -65 to +150°C PT Power Dissipation 0.
HWL26NPB Datasheet
