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HWL27YRA L-Band GaAs Power FET

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Description

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The HWL27YRA is a Medium Power GaAs FET designed for various L-band & S-band applications.

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Datasheet Specifications

Part number
HWL27YRA
Manufacturer
Hexawave
File Size
88.08 KB
Datasheet
HWL27YRA-Hexawave.pdf
Description
L-Band GaAs Power FET

Features

* Low Cost GaAs Power FET
* Class A or Class AB Operation
* Greater than 17 dB Gain

Applications

* It is presently offered in low cost ceramic package. Absolute Maximum Ratings VDS VGS ID IG TCH TSTG PT
* Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation
* mounted on an infinite heat sink +15V -5V IDSS

HWL27YRA Distributors

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