RF1S30N06LESM mosfets equivalent, n-channel enhancement-mode power mosfets.
* 30A, 60V
* rDS(ON) = 0.047Ω
* 2kV ESD Protected
* Temperature Compensating PSPICE Model
* Peak Current vs Pulse Width Curve
* UIS Rating Curve
D.
such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated d.
The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in o.
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