RF1S30N06LESM - N-Channel Enhancement-Mode Power MOSFETs
Harris
Download the RF1S30N06LESM datasheet PDF.
This datasheet also covers the RF1S30N06LE variant, as both devices belong to the same n-channel enhancement-mode power mosfets family and are provided as variant models within a single manufacturer datasheet.
General Description
The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.
Full PDF Text Transcription for RF1S30N06LESM (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
RF1S30N06LESM. For precise diagrams, and layout, please refer to the original PDF.
RFP30N06LE, RF1S30N06LE, SEMICONDUCTOR RF1S30N06LESM July 1995 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs Features • 30A, ...
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Logic Level N-Channel Enhancement-Mode Power MOSFETs Features • 30A, 60V • rDS(ON) = 0.047Ω • 2kV ESD Protected • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve Description The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These tr
RF1S30N06LESM Datasheet
