HX8N60 mosfet equivalent, n-channel mosfet.
* RDS(ON)=1.2Ω@VGS=10V
* Ultra Low gate charge(typical 28nC)
* Low reverse transfer capacitance(Crss=typical 12.0pF)
* Fast switching capability
* Ava.
in power supplies .PWM motor controls, high efficient DC to DC converters and bridge circuits.
* Features
* RDS(.
The HX8N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually usually used at h.
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