HX8N80 datasheet, mosfet equivalent, CRE

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Features and benefits

� RDS(ON) = 1.75 Ω@VGS = 10 V � Low gate charge ( typical 27nC) � High ruggedness � Fast switching capability � Avalanche energy specified � Improved dv/dt capability

Application

such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
* Features � RDS(ON) = 1.

Description

The HX8N80(C) N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
* Features � RDS(.

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