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HFP4N65 Datasheet - HUASHAN ELECTRONIC

HFP4N65 N-Channel Enhancement Mode Field Effect Transistor

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche .

HFP4N65 Features

* 4A, 650V(See Note), RDS(on)

HFP4N65 Datasheet (814.75 KB)

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Datasheet Details

Part number:

HFP4N65

Manufacturer:

HUASHAN ELECTRONIC

File Size:

814.75 KB

Description:

N-channel enhancement mode field effect transistor.

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HFP4N65 N-Channel Enhancement Mode Field Effect Transistor HUASHAN ELECTRONIC

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