HFF11N60S Datasheet, HUASHAN ELECTRONIC

* 10.8A, 600V(See Note), RDS(on) <0.75Ω@VGS = 10 V
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* RoHS compliant █ Maximum Rat.

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance,.

HFF2N60

HFF5N50

HFF5N60

HFF630

HFF640

HFF7N60

HF-102

HF-110

HF-112

HF-118

HF-122

HF-128

HF-130