Huajing Discrete Devices
Silicon N-Channel Power MOSFET
○R
CS540B8
N-Channel MOSFET
Applications:
• Automotive
• DC Motor Control
• Class D Amplifier
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
Ordering Information
PART NUMBER
PACKAGE
CS540B8
TO-220
BRAND
CS540B8
Pb
VDSS
100V
Lead Free Package and Finish
H F Halogen Free
RDS(on)(Max)
ID
48mΩ
33A
D
G
D
S
TO-220 Not to Scale
G
S
Absolute Maximum Ratings Tc= 25℃ unless otherwise specified
Symbol
Parameter
VDSS
Drain-to-Source Voltage
(NOTE *1)
ID
ID@ 100 ℃
Continuous Drain Current
Continuous Drain Current
Maximum
100
33
Figure 3
IDM Pulsed Drain Current, VGS@ 10V
Power Dissipation
PD Derading Factor above 25 ℃
VGS Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy
L=1.3 mH, ID=20 Amps
IAS Pulsed Avalanche Rating
(NOTE *2)
110
128
0.86
±20
260
Figure 8
dv/dt
Peak Diode Recovery dv/dt
(NOTE *3)
3.0
TL
TPKG
Maximum Temperature for Soldering
Leads at 0.063in(1.6mm) from Case for 10 seconds
Package Body for 10 seconds
300
260
TJ and TSTG Operation Junction and Storage Temperature Range
-55 to 175
*Drain Current limited by Maximum Junction Temperature
Caution: Stresses greater than those listed in “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Units
V
A
W
W/ ℃
V
mJ
A
V/ns
℃
℃
Thermal Resistance
Symbol Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
Maximum
1.17
62
Units
℃/W
℃/W
Test Condition
Water cooled heat sink, PD adjusted for a
peak junction temperature of +175℃.
1 cubic foot chamber, free air.
WUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1/11 REV:2008-1
