CS5J65F B9-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy.
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Silicon N-Channel Power MOSFET CS5J65F B9-G General Description： CS5J65F B9-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which ...
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Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package type is TO-220F, which accords with the RoHS standard. VDSS ID PD(TC=25℃) RDS(ON)Typ Features： Fast Switching Low Gate Charge Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： ○R 650 V 5A 28
CS5J65FB9-G Datasheet
