CS2N60F mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤4.5Ω) l Low Gate Charge
(Typical Data:8.5nC)
l Low Reverse transfer capacitances(Typical:5.4pF) l 100% Single Pulse avalanche.
Power switch circuit of adaptor and charger.
Absolute（ Tc= 25℃ unless otherwise specified） ：
Symbol VDSS ID IDM VGS EA.
CS2N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw.
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