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CS2N60A3H Datasheet Silicon N-Channel Power MOSFET

Manufacturer: Huajing Microelectronics

Overview: Silicon N-Channel Power MOSFET CS2N60 A3H ○R General.

Datasheet Details

Part number CS2N60A3H
Manufacturer Huajing Microelectronics
File Size 357.27 KB
Description Silicon N-Channel Power MOSFET
Download CS2N60A3H Download (PDF)

General Description

: VDSS 600 V CS2N60 A3H, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 3.6 Ω performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

The package form is TO-251, which accords with the RoHS standard..

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤4.5Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:5.4pF) l 100% Single Pulse avalanche energy Test.