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HY3506P - N-Channel Enhancement Mode MOSFET

General Description

100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D G S D S TO-220 D TO-247 Applications

Power Management for Inverter Systems.

Key Features

  • 60V/190A RDS(ON) = 3.0 mΩ (typ. ) @ VGS=10V Pin.

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Datasheet Details

Part number HY3506P
Manufacturer HOOYI
File Size 1.42 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY3506P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HY3506P/W N-Channel Enhancement Mode MOSFET Features • • • • 60V/190A RDS(ON) = 3.0 mΩ (typ.) @ VGS=10V Pin Description 100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D G S D S TO-220 D TO-247 Applications • • Switching application Power Management for Inverter Systems. S G N-Channel MOSFET Ordering and Marking Information Package Code ÿ YYXXXJWW G P HY3506 ÿ YYXXXJWW G W HY3506 P : TO220-3L Date Code YYXXX WW Assembly Material G : Lead Free Device W : TO247-3L Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.