Datasheet4U Logo Datasheet4U.com

HY3506P - N-Channel MOSFET

Description

DS G TO-220FB-3L G DS TO-263-2L Applications Switching application

Power Management for Inverter Systems.

Features

  • 60V/190A RDS(ON) = 3.5 m(typ. ) @ VGS=10V.
  • 100% avalanche tested.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

📥 Download Datasheet

Datasheet Details

Part number HY3506P
Manufacturer HUAYI
File Size 579.07 KB
Description N-Channel MOSFET
Datasheet download datasheet HY3506P Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HY3506P N-Channel Enhancement Mode MOSFET HOOYI
HY3506W N-Channel Enhancement Mode MOSFET HOOYI
HY3503 N-Channel MOSFET HOOYI
HY3503B N-Channel MOSFET HOOYI
HY3503P N-Channel MOSFET HOOYI

Other Datasheets by HUAYI

Part Number Description
HY3506B N-Channel MOSFET
HY3503C2 N-Channel Enhancement Mode MOSFET
HY3003D N-Channel Enhancement Mode MOSFET
HY3003U N-Channel Enhancement Mode MOSFET
HY3003V N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text
HY3506P/B N-Channel Enhancement Mode MOSFET Features • 60V/190A RDS(ON) = 3.5 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L G DS TO-263-2L Applications  Switching application  Power Management for Inverter Systems. Ordering and Marking Information N-Channel MOSFET P HY3506 YYXXXJWW G B HY3506 YYXXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS.
Published: |