HY3503P - N-Channel MOSFET

HOOYI

Download the HY3503P datasheet PDF. This datasheet also covers the HY3503 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

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HY3503P n-channel mosfet by HOOYI - Datasheet Preview — Note: The manufacturer provides a single datasheet file (HY3503-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	HY3503P
Manufacturer	HOOYI
File Size	532.35 KB
Description	N-Channel MOSFET
Datasheet	HY3503P Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
HY3503C2	N-Channel Enhancement Mode MOSFET	HUAYI
HY3506B	N-Channel MOSFET	HUAYI
HY3506P	N-Channel MOSFET	HUAYI
HY3003D	N-Channel Enhancement Mode MOSFET	HUAYI
HY3003U	N-Channel Enhancement Mode MOSFET	HUAYI

Other Datasheets by HOOYI

Part Number	Description
HY3503	N-Channel MOSFET
HY3503B	N-Channel MOSFET
HY3506P	N-Channel Enhancement Mode MOSFET
HY3506W	N-Channel Enhancement Mode MOSFET
HY3003	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HY3503P/B Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation TC=25°C TC=25°C TC=100°C TC=25°C Tc=100°C RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient EAS Avalanche Energy,Single Pulsed L=0.5mH Note * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=24V Rating 30 ±20 175 -55 to 175 150 570** 150 117 150 75 1.0 62.