HY3503P Datasheet | HOOYI

HY3503P/B Absolute Maximum Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C IDM Pulsed Drain Current - ID Continuous Drain Current PD Maximum Power Dissipation TC=25°C TC=25°C TC=100°C TC=25°C Tc=100°C RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient EAS Avalanche Energy,Single Pulsed L=0.5m H Note - Repetitive rating ; pulse width limiited by junction temperature - - Drain current is limited by junction temperature - - - VD=24V Rating 30 ±20 175 -55 to 175 150 570- - 150 117 150 75 1.0 62.5 500- - - Electrical Characteristics (TC = 25°C Unless Otherwise Noted) Unit V °C °C A W °C/W °C/W m J Symbol Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current RDS(ON)- Drain-Source On-state Resistance Diode Characteristics VSD - Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions HY3503 Unit Min. Typ. Max. VGS=0V,...