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HY1908M - N-Channel Enhancement Mode MOSFET

Download the HY1908M datasheet PDF. This datasheet also covers the HY1908P variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

DS G TO-220FB-3L DS G TO-220FB-3S DS G TO-263-2L Applications

Power Management for Inverter Systems.

Key Features

  • 80V/90A, RDS(ON)= 7.0mΩ (typ. ) @ VGS=10V.
  • Avalanche Rated.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY1908P-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY1908M
Manufacturer HOOYI
File Size 3.99 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY1908M Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HY1908P/M/B/PS/PM/MF N-Channel Enhancement Mode MOSFET Features • 80V/90A, RDS(ON)= 7.0mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-220FB-3S DS G TO-263-2L Applications • Power Management for Inverter Systems.