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HY1001P, HY1001M Datasheet - HOOYI

HY1001P N-Channel Enhancement Mode MOSFET

5 Sec, 245°C 1000 Hrs, Bias @ 125°C 168 Hrs, 100%RH, 2atm, 121°C 500 Cycles, -65°C~150°C 10 www.hooyi-semi.com .

HY1001P Features

* 70V/75A, RDS(ON)=7.8mΩ (typ.) @ VGS=10V

* Avalanche Rated

* Reliable and Rugged

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Power Management for Inverter Systems. S D G G D S TO-220 D G Ordering and Marking Information S N-

HY1001M-HOOYI.pdf

This datasheet PDF includes multiple part numbers: HY1001P, HY1001M. Please refer to the document for exact specifications by model.
HY1001P Datasheet Preview Page 2 HY1001P Datasheet Preview Page 3

Datasheet Details

Part number:

HY1001P, HY1001M

Manufacturer:

HOOYI

File Size:

1.02 MB

Description:

N-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: HY1001P, HY1001M.
Please refer to the document for exact specifications by model.

HY1001P Distributor

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TAGS

HY1001P HY1001M N-Channel Enhancement Mode MOSFET HOOYI