HY1001M
HY1001M is N-Channel Enhancement Mode MOSFET manufactured by HOOYI.
HY1001M/P
N-Channel Enhancement Mode MOSFET
Features
- 70V/75A,
RDS(ON)=7.8mΩ (typ.) @ VGS=10V
- Avalanche Rated
- Reliable and Rugged
- Lead Free and Green Devices Available
(RoHS pliant)
Applications
- Power Management for Inverter Systems.
TO-220
Ordering and Marking Information
N-Channel MOSFET
HY1001
ÿ YYWWJ G
Package Code
P : TO220-3L Date Code YYWW Assembly Material G : Lead Free Device
Note:
HOOYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate termination finish; which are fully pliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL...
