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HY1001M - N-Channel Enhancement Mode MOSFET

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Datasheet Details

Part number
HY1001M
Manufacturer
HOOYI
File Size
1.02 MB
Datasheet
HY1001M-HOOYI.pdf
Description
N-Channel Enhancement Mode MOSFET

HY1001M Product details

Description

5 Sec, 245°C 1000 Hrs, Bias @ 125°C 168 Hrs, 100%RH, 2atm, 121°C 500 Cycles, -65°C~150°C 10 www.hooyi-semi.com.

Features

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N-Channel Enhancement Mode MOSFET HOOYI
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