H01N45A - N-Channel Power Field Effect Transistor

HI-SINCERITY

Download the H01N45A datasheet PDF. This datasheet also covers the H01N45A-HI variant, as both devices belong to the same n-channel power field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Features

Typical RDS(on)=4.1Ω.
Extremely High dv/dt Capability.
100% Avalanche Tested.
Gate Charge Minimized.
New High Voltage Benchmark.

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H01N45A n-channel power field effect transistor by HI-SINCERITY - Datasheet Preview — Note: The manufacturer provides a single datasheet file (H01N45A-HI-SINCERITY.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	H01N45A
Manufacturer	HI-SINCERITY
File Size	44.18 KB
Description	N-Channel Power Field Effect Transistor
Datasheet	H01N45A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HI-SINCERITY MICROELECTRONICS CORP. H01N45A N-Channel Power Field Effect Transistor Features • Typical RDS(on)=4.

Published: Apr 30, 2019 |