HGT1S7N60C3DS igbt equivalent, ufs series n-channel igbt.
* 14A, 600V at TC = 25oC
* 600V Switching SOA Capability
* Typical Fall Time . . . . . . . . . . . . . . 140ns at TJ = 150oC
* Short Circuit Rating
* .
ope.
The HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss .
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