HGT1S7N60A4DS igbt equivalent, n-channel igbt.
of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower o.
operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequen.
Symbol
All Types
Units
Collector to Emitter Voltage Collector Current Continuous
At TC = 25°C At TC = 110°C
BVCES
600
V
IC25
34
A
IC110
14
A
Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pu.
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