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HNM2302ALB - N-Channel Enhancement Mode Field Effect Transistor SMD

Features

  •  .
  • 20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V  .
  • High dense cell design for extremely low RDS(ON)  .
  • Rugged and reliable  .
  • Lead free product is acquired  .
  • SOT-23 Package  .
  • Marking Code: A2SHB   Case Material: Molded Plastic.   UL Flammability Classification Rating 94V-0 Internal Block Diagram D HNM2302ALB(SOT-23) D HNM2302ALB N-Channel MOSFETs HNM2302ALB N-Channel Enhancement Mode Field Effect Transistor 2302 SI2302 AO2302 GMS2302 () G S SOT-23 S G SOT-23 DEVICE.

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Datasheet Details

Part number HNM2302ALB
Manufacturer HAOHAI
File Size 272.26 KB
Description N-Channel Enhancement Mode Field Effect Transistor SMD
Datasheet download datasheet HNM2302ALB Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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3.7A, 20V N  N  N-Channel Enhancement Mode Field Effect Transistor SMD   Features  ■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V  ■High dense cell design for extremely low RDS(ON)  ■Rugged and reliable  ■Lead free product is acquired  ■SOT-23 Package  ■Marking Code: A2SHB   Case Material: Molded Plastic.
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