* VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and.

General Features
* VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V
* High density cell desig.

The +01. uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V

HM80N70

HM8002D

HM803

HM809

HM810

HM8113C

HM8113CM

HM8202

HM82C11

HM8348

HM86171

HM879

HM8810A

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