HM80N70 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDSS=80V／VGSS=±25V／ID=66A RDS(ON)=12mΩ(Max.)@VGS=10V
* Reliab le and Rugged
*Advancedtrench process technology
*HighDensity Cell.
* Synchronous Rectification
* Power Management in Inverter System
Switching Time Test Circuit.
HM80N70
Marking and pin Assignment
TO-220-3L top view
Package Marking and Ordering Information
Device Marking HM80N70
Device HM80N70
Device Package TO-220-3L
Reel Size
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Page 1
Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsem.
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