HM3307B datasheet, mosfet equivalent, H&M semi

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Features and benefits

* VDSS=70V／VGSS=±25V／ID=114A RDS(ON)=8mΩ(max.)@VGS=10V
* Low Dense Cell Design
* Reliable and Rugged
* Advanced trench process technology Pin Descripti.

Application

* Synchronous Rectification
* Power Management in Inverter System Switching Time Test Circuit and Waveforms HM3.

Description

Applications
* Synchronous Rectification
* Power Management in Inverter System Switching Time Test Circuit and Waveforms HM3307B Marking and pin Assignment TO-220-3L top view Package Marking and Ordering Information Device Marking HM330.

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