HM3207 mosfet equivalent, n-channel power mosfet.
* VDSS =75V,ID =210A RDS(ON) < 4mΩ @ VGS=10V
Schematic diagram
* Good stability and uniformity with high EAS
* Special process technology for high ESD capab.
and a wide variety of other applications.
General Features
* VDSS =75V,ID =210A RDS(ON) < 4mΩ @ VGS=10V
Schematic .
The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications.
General Features
* VDSS =75V,ID =210A RDS(ON) < 4mΩ @ VG.
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