HMS135N85G Datasheet - H&M Semiconductor

HMS135N85G N-Channel Super Trench II Power MOSFET

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency.

HMS135N85G Features

* VDS =85V,ID =135A RDS(ON)=3.3mΩ , typical @ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-252 DFN5X6-8L D DDD D DDD top view S SSG Top Vie

HMS135N85G Datasheet (1.37 MB)