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HMS135N10G Datasheet - H&M Semiconductor

HMS135N10G N-Channel Super Trench II Power MOSFET

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency.

HMS135N10G Features

* VDS =100V,ID =135A RDS(ON)=3.4mΩ , typical @ VGS=10V ID=1A RDS(ON)=3.9mΩ , typical @ VGS=10V ID=20A

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-252

HMS135N10G Datasheet (1.30 MB)

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Datasheet Details

Part number:

HMS135N10G

Manufacturer:

H&M Semiconductor

File Size:

1.30 MB

Description:

N-channel super trench ii power mosfet.

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HMS135N10G N-Channel Super Trench Power MOSFET H&M Semiconductor

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