HM6602 mosfet equivalent, n & p-channel enhancement mode power mosfet.
* N-Channel VDS = 30V,ID = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON) <58mΩ @ VGS=10V
* P-Channel VDS = -30V,ID = -2.5A RDS(ON) < 130mΩ @ VGS=-10V RDS(ON) < 180mΩ @ V.
*Load switch
*Power management
SOT-23-L top view
Package Marking and Ordering Information
Device Marking Dev.
The HM6602 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge . This device is suitable for use as a Battery protection or in other Switching application.
General Features
* N-Channel VDS = 30V,ID = 3.6A RDS(ON) < 73.
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