logo

HM6602 Datasheet, H&M Semiconductor

HM6602 mosfet equivalent, n & p-channel enhancement mode power mosfet.

HM6602 Avg. rating / M : 1.0 rating-12

datasheet Download

HM6602 Datasheet

Features and benefits


* N-Channel VDS = 30V,ID = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON) <58mΩ @ VGS=10V
* P-Channel VDS = -30V,ID = -2.5A RDS(ON) < 130mΩ @ VGS=-10V RDS(ON) < 180mΩ @ V.

Application


*Load switch
*Power management SOT-23-L top view Package Marking and Ordering Information Device Marking Dev.

Description

The HM6602 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a Battery protection or in other Switching application. General Features
* N-Channel VDS = 30V,ID = 3.6A RDS(ON) < 73.

Image gallery

HM6602 Page 1 HM6602 Page 2 HM6602 Page 3

TAGS

HM6602
P-Channel
Enhancement
Mode
Power
MOSFET
HM6604
HM66
HM6-6617B883
H&M Semiconductor

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts