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HM60N03 Datasheet, H&M Semiconductor

HM60N03 mosfet equivalent, n-channel enhancement mode power mosfet.

HM60N03 Avg. rating / M : 1.0 rating-13

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HM60N03 Datasheet

Features and benefits


* VDS =30V,ID =60A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 13mΩ @ VGS=4.5V Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized.

Application

General Features
* VDS =30V,ID =60A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 13mΩ @ VGS=4.5V Schematic diagram
* H.

Description

The HM60N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =30V,ID =60A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 13mΩ @ VGS=4.5V S.

Image gallery

HM60N03 Page 1 HM60N03 Page 2 HM60N03 Page 3

TAGS

HM60N03
N-Channel
Enhancement
Mode
Power
MOSFET
HM60
HM6-6617B883
HM6-6642-9
H&M Semiconductor

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