HM4887 mosfet equivalent, dual p-channel enhancement mode power mosfet.
* VDS =-100V,ID =-4.5A RDS(ON) <100mΩ @ VGS=-10V
(Typ:85mΩ)
S1 S2
Schematic diagram
* Super high dense cell design
* Advanced trench process technology
It is ESD protested.
D1 G1
G2
D2
General Features
* VDS =-100V,ID =-4.5A RDS(ON) <100mΩ @ VGS=-10V
(Typ:85mΩ)
.
The HM4887 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested.
D1 G1
G2
D2
General Features
* VDS =-100V,ID =-4.5A RDS(ON) <100mΩ.
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