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HM4884 - Dual N-Channel MOSFET

Description

The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =40V,ID =10A RDS(ON) < 24mΩ @ VGS=10V RDS(ON) < 35mΩ @ VGS=4.5V Schematic diagram.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.

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HM Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.  GENERAL FEATURES ●VDS =40V,ID =10A RDS(ON) < 24mΩ @ VGS=10V RDS(ON) < 35mΩ @ VGS=4.