HM4884 mosfet equivalent, dual n-channel mosfet.
*VDS =40V,ID =10A RDS(ON) < 24mΩ @ VGS=10V RDS(ON) < 35mΩ @ VGS=4.5V
Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized .
GENERAL FEATURES
*VDS =40V,ID =10A RDS(ON) < 24mΩ @ VGS=10V RDS(ON) < 35mΩ @ VGS=4.5V
Schematic .
The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
*VDS =40V,ID =10A RDS(ON) < 24mΩ @ VGS=10V RDS(ON) < 35m.
Image gallery
TAGS
Download (Size : 577.13KB)