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HM4606A Datasheet, H&M Semiconductor

HM4606A mosfet equivalent, n & p-channel enhancement mode power mosfet.

HM4606A Avg. rating / M : 1.0 rating-12

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HM4606A Datasheet

Features and benefits


* N-Channel VDS = 30V,ID =6.5A RDS(ON) < 30mΩ @ VGS=10V
* P-Channel VDS = -30V,ID = -7A RDS(ON) < 33mΩ @ VGS=-10V
* High power and current handing capability .

Application

General Features
* N-Channel VDS = 30V,ID =6.5A RDS(ON) < 30mΩ @ VGS=10V
* P-Channel VDS = -30V,ID = -7A RDS(O.

Description

The HM4606A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features
* N-Channel VDS.

Image gallery

HM4606A Page 1 HM4606A Page 2 HM4606A Page 3

TAGS

HM4606A
P-Channel
Enhancement
Mode
Power
MOSFET
H&M Semiconductor

Manufacturer


H&M Semiconductor

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