*VDS =30V,ID =25A RDS(ON) < 5.5mΩ @ VGS=10V RDS(ON) < 7.0mΩ @ VGS=5V
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage an.

HM4302B GENERAL FEATURES
*VDS =30V,ID =25A RDS(ON) < 5.5mΩ @ VGS=10V RDS(ON) < 7.0mΩ @ VGS=5V
* High density .

The HM4302B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. HM4302B GENERAL FEATURES
*VDS =30V,ID =25A RDS(ON) < 5.5mΩ @ VGS=10V RDS(ON) < 7.0mΩ @ V.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts