Datasheet4U Logo Datasheet4U.com

HM4302 - N-Channel Enhancement Mode Power MOSFET

Description

The+0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =30V,ID =A RDS(ON) < mΩ @ VGS=10V RDS(ON) < mΩ @ VGS=5V.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HM4315P 4096 x 1-Bit SRAM Renesas Technology
HM4-6514-B 1024 x 4 CMOS RAM Intersil Corporation
HM4-6516-9 2K x 8 CMOS RAM Intersil Corporation
HM4-65162-9 2K x 8 Asynchronous CMOS Static RAM Intersil Corporation
HM4-65162B-9 2K x 8 Asynchronous CMOS Static RAM Intersil Corporation

Other Datasheets by H&M Semiconductor

Part Number Description
HM4302A N-Channel Enhancement Mode Power MOSFET
HM4302B N-Channel Enhancement Mode Power MOSFET
HM432 ADJUSTABLE PRECISION SHUNT REGULATORS
HM4354 N-Channel Enhancement Mode Power MOSFET
HM40DN04K Dual N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
+0 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The+0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Published: |