Datasheet4U Logo Datasheet4U.com

HM3416E - N-Channel Enhancement Mode Power MOSFET

Features

  • Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions Marking D AEZE-.
  • SOT-23(.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HM3401D P-Channel MOSFET VBsemi
HM3407 P-Channel MOSFET VBsemi
HM3422 N-Channel 60V MOSFET VBsemi
HM3440 Synchronous Buck-Boost DC/DC Regulator H&M semi
HM3-6514-9 1024 x 4 CMOS RAM Intersil Corporation

Other Datasheets by H&M Semiconductor

Part Number Description
HM3416 1A Synchronous Step-Down Converter
HM3416B N-Channel Enhancement Mode Power MOSFET
HM3410 1.2A synchronous rectification Buck converter
HM3413 P-Channel Enhancement Mode Power MOSFET
HM3413B P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
20V N-Channel Enhancement-Mode MOSFET 20V N MOS HM3416E VDS= 20 ID=4.2 A RDS(ON), Vgs @ 1.8V, Ids @ 3A = 36mΩ RDS(ON), Vgs @ 2.5V, Ids @ 3.8 A = 28mΩ RDS(ON), Vgs @ 4.5V, Ids @ 4.2 A = 24mΩ ESD Protected：2000V Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions Marking D AEZE-** SOT-23(PACKAGE) GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 1.00 0.10 0.40 0.85 REF. 1.30 0.20 1.
Published: |