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HM3416B - N-Channel Enhancement Mode Power MOSFET

Description

The HM3416B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

Features

  • VDS = 20V,ID =6A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Schematic diagram 3416 Marking and pin assignment.

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Datasheet Details

Part number HM3416B
Manufacturer H&M Semiconductor
File Size 593.76 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM3416B Datasheet

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Full PDF Text Transcription

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HM3416B N-Channel Enhancement Mode Power MOSFET Description The HM3416B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = 20V,ID =6A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.
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