HM2N10B mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 100V,ID = 2A RDS(ON) <240mΩ @ VGS=10V (Typ:210mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current <.
General Features
* VDS = 100V,ID = 2A RDS(ON) <240mΩ @ VGS=10V (Typ:210mΩ)
* High density cell design for ultra.
The HM1% uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS = 100V,ID = 2A RDS(ON) <240mΩ @ VGS=10V (Typ:210mΩ)
* High dens.
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