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HM2318 Datasheet, H&M Semiconductor

HM2318 mosfet equivalent, n-channel enhancement mode power mosfet.

HM2318 Avg. rating / M : 1.0 rating-12

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HM2318 Datasheet

Features and benefits


* RDS(ON) ≦40mΩ@VGS=10V
* RDS(ON) ≦65mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC cur.

Application


* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC .

Description

The HM2318 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.   .

Image gallery

HM2318 Page 1 HM2318 Page 2 HM2318 Page 3

TAGS

HM2318
N-Channel
Enhancement
Mode
Power
MOSFET
H&M Semiconductor

Manufacturer


H&M Semiconductor

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