* RDS(ON) ≦40mΩ@VGS=10V
* RDS(ON) ≦65mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC cur.

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC .

The HM2318 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.   .

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts