HM2310 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =60V,ID =3A RDS(ON) <105mΩ @ VGS=10V RDS(ON) < 125mΩ @ VGS=4.5V
* High Power and current handing capability
* Lead free product is acquired
* Surfac.
The HM2310 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
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