HM2309B mosfet equivalent, p-channel enhancement mode power mosfet.
* RDS(ON)≦188mΩ@VGS=-10V
* RDS(ON)≦266mΩ@VGS=-4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC c.
* Power Management
* Portable Equipment
* Battery Powered System
* Load Switch
Absolute Maximum Ratings.
The HM2309B is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
FEATURES
* RDS(ON).
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