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HM2309 Datasheet, H&M Semiconductor

HM2309 mosfet equivalent, p-channel enhancement mode power mosfet.

HM2309 Avg. rating / M : 1.0 rating-12

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HM2309 Datasheet

Features and benefits


* RDS(ON)≦215mΩ@VGS=-10V
* RDS(ON)≦260mΩ@VGS=-4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC c.

Application


* Power Management
* Portable Equipment
* Battery Powered System
* Load Switch Absolute Maximum Ratings.

Description

The HM2309 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES
* RDS(ON)≦.

Image gallery

HM2309 Page 1 HM2309 Page 2 HM2309 Page 3

TAGS

HM2309
P-Channel
Enhancement
Mode
Power
MOSFET
H&M Semiconductor

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