The HM2305PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
This device is suitable for use as a load switch or in PWM applications.
| Part number | HM2305PR |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 389.27 KB |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 HM2305PR Datasheet
|
|
|
| Part Number | Description | Manufacturer |
|---|---|---|
| HM2301 | Digital-output humidity and temperature sensor | Hanwei |
| HM2302 | Digital temperature and humidity sensor | ETC |
| HM2302 | N-Channel MOSFET | VBsemi |
| HM2309 | P-Channel 60V MOSFET | VBsemi |
| HM2310 | N-Channel 60V MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| HM2305 | P-Channel Enhancement Mode Power MOSFET |
| HM2305A | P-Channel Enhancement Mode Power MOSFET |
| HM2305B | P-Channel Enhancement Mode Power MOSFET |
| HM2305D | P-Channel Enhancement Mode Power MOSFET |
| HM2300 | N-Channel Enhancement Mode Power MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
