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HM2305 - P-Channel Enhancement Mode Power MOSFET

Description

The +0 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -20V,ID = -4.1A RDS(ON).

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Datasheet Details

Part number HM2305
Manufacturer H&M Semiconductor
File Size 380.62 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM2305 Datasheet

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Full PDF Text Transcription

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+0 P-Channel Enhancement Mode Power MOSFET Description The +0 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -4.1A RDS(ON) <75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4.
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