HM01N100PR Datasheet - H&M Semiconductor

HM01N100PR Silicon N-Channel Po wer MOSFET

HM01N100PR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 1000 0.1 3 46 performance and enhance the avalanche energy. The transistor can be used in various power swit.

HM01N100PR Features

* z Fast Switching z Low ON Resistance(Rdson≤10.5Ω) z Low Gate Charge (Typical Data:6.0nC) z Low Reverse transfer capacitances(Typical:4pF) z 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Paramet

HM01N100PR Datasheet (902.27 KB)