+0.1 2.4-0.1
+0.1 1.3-0.1
Epitaxial planar die construction
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ Tstg Rating 60 40 6 0.2 0.2 150 -55 to 150 Unit V V V A W
Electrical Character.
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SMD Type
NPN Transistors KMBT3904(MMBT3904)
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Unit: mm
Features
+0.1 2.4-0.1
+0.1 1.3-0.1
Epitaxial planar die construction
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ Tstg Rating 60 40 6 0.2 0.2 150 -55 to 150 Unit V V V A W
Electrical Characteristics Ta = 25
Parameter Collecto- base breakdown voltage www.DataSheet4U.
KMBT3904 Datasheet
