* -100V, -10A, RDS(ON)=140mΩ@VGS=-10V
* VGS Guaranteed ±25V
* Improved dv/dt capability
* Fast switching
* Green Device Available
* TO-252-2L pack.

Features
* -100V, -10A, RDS(ON)=140mΩ@VGS=-10V
* VGS Guaranteed ±25V
* Improved dv/dt capability
* Fas.

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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