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GSMDD3094 - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 30V, 90A, RDS(ON)=4mΩ@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS guaranteed.
  • Green Device Available.
  • TO-252-2L package design.

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Datasheet Details

Part number GSMDD3094
Manufacturer Globaltech
File Size 518.12 KB
Description N-Channel MOSFET
Datasheet download datasheet GSMDD3094 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GSMDD3094 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ 30V, 90A, RDS(ON)=4mΩ@VGS=10V „ Improved dv/dt capability „ Fast switching „ 100% EAS guaranteed „ Green Device Available „ TO-252-2L package design Applications „ MB / VGA / Vcore „ POL Applications „ SMPS 2nd SR Packages & Pin Assignments GSMDD3094DF (TO-252-2L) Top View Description Gate Source Drain GSMDD3094 www.gs-power.
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