GSM2354 N-Channel MOSFET
100V/3.2A,RDS(ON)=145mΩ@VGS=10V 100V/2.6A,RDS(ON)=160mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resi.
Features 100V/3.2A,RDS(ON)=145mΩ@VGS=10V 100V/2.6A,RDS(ON)=160mΩ@VGS=4.5V Super high density.
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